Results of the summarizing process for the arXiv paper: 2206.03068v1

Spin-orbit torques (SOTs) have emerged as a promising way to manipulate magnetization using in-plane current, with the potential to revolutionize information technologies by enabling fast and low-power devices. Recently, it has been shown that two-dimensional electron gases (2DEGs) at oxide interfaces can efficiently convert spin-to-charge currents. The ability to control 2DEGs using gate voltages offers a degree of freedom not available in classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, where the sign and amplitude of SOTs are fixed by the stack structure. In this study, researchers report on their successful non-volatile electric-field control of SOTs in an oxide-based Rashba–Edelstein 2DEG. They demonstrate that the 2DEG can be controlled using a backgate electric field, providing two remanent and switchable states with a large resistance contrast of 1064%. This achievement opens up new possibilities for electrically reconfigurable SOT MRAM circuits, SOT oscillators, skyrmion and domain wall based devices, and magnonic circuits. The study was conducted on a 2DEG–CoFeB/MgO heterostructure with large perpendicular magnetization. By controlling the gate voltage applied to the oxide layer, researchers were able to switch between two stable states of the 2DEG with different conductivities. This change in conductivity led to a corresponding change in the magnitude and direction of SOTs generated by an inplane current passing through the CoFeB layer. The researchers found that they could control both the amplitude and sign of these SOTs nonvolatilely. This breakthrough is significant because it validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration. It also paves the way for developing novel devices based on electrically controllable SOTs such as MRAMs, oscillators, and magnonic circuits. The ability to control SOTs electrically in a nonvolatile way using gate voltages offers a new degree of freedom for designing spin–orbitronic devices with improved functionality and energy efficiency.

• - Spin-orbit torques (SOTs) can manipulate magnetization using in-plane current
• - Two-dimensional electron gases (2DEGs) at oxide interfaces can efficiently convert spin-to-charge currents
• - Gate voltages offer a degree of freedom not available in classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics
• - Researchers successfully demonstrated non-volatile electric-field control of SOTs in an oxide-based Rashba–Edelstein 2DEG
• - This achievement opens up new possibilities for electrically reconfigurable SOT MRAM circuits, SOT oscillators, skyrmion and domain wall based devices, and magnonic circuits
• - The study was conducted on a 2DEG–CoFeB/MgO heterostructure with large perpendicular magnetization
• - By controlling the gate voltage applied to the oxide layer, researchers were able to switch between two stable states of the 2DEG with different conductivities
• - This change in conductivity led to a corresponding change in the magnitude and direction of SOTs generated by an inplane current passing through the CoFeB layer
• - The researchers found that they could control both the amplitude and sign of these SOTs nonvolatilely
• - This breakthrough validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration
• - It paves the way for developing novel devices based on electrically controllable SOTs such as MRAMs, oscillators, and magnonic circuits.

Scientists found a new way to control magnets using electricity. They used special materials called 2DEGs and gate voltages to do this. This can help create new types of computer memory and other devices that use magnets. The scientists tested their idea on a special type of material with a strong magnet inside it. By changing the electricity going through the material, they could change the direction of the magnet. This is an important discovery that can lead to many new inventions. Definitions- Spin-orbit torques (SOTs): A force that can change the direction of a magnet using electricity. - Two-dimensional electron gases (2DEGs): A special type of material where electrons move only in two dimensions. - Gate voltages: Electricity applied to a special layer in a device that can control how other parts of the device work. - Ferromagnetic: Materials that are strongly attracted to magnets. - Spin Hall effect: A phenomenon where electric current creates magnetic effects in certain materials. - Rashba–Edelstein: A type of interaction between electrons and magnetic fields in certain materials. - MRAM: Magnetic Random Access Memory, a type of computer memory that uses magnets instead of electric charges. - Skyrmion: A type of magnetic structure that looks like a twisted knot or vortex. - Domain wall: A boundary between different regions with different magnetic properties in a material. - Magnonic circuits: Devices that use waves instead of electric currents to transmit information.

Spin-Orbit Torques: A Revolution in Information Technologies

In recent years, spin-orbit torques (SOTs) have emerged as a promising way to manipulate magnetization using in-plane current. This technology has the potential to revolutionize information technologies by enabling fast and low-power devices. Recently, it was discovered that two-dimensional electron gases (2DEGs) at oxide interfaces can efficiently convert spin-to-charge currents. The ability to control 2DEGs using gate voltages offers a degree of freedom not available in classical ferromagnetic/spin Hall effect bilayers for spin–orbitronics, where the sign and amplitude of SOTs are fixed by the stack structure.

Nonvolatile Electric Field Control of Spin Orbit Torques

A research team recently reported on their successful nonvolatile electric field control of SOTs in an oxide–based Rashba–Edelstein 2DEG. They demonstrated that the 2DEG could be controlled using a backgate electric field, providing two remanent and switchable states with a large resistance contrast of 1064%. This achievement opens up new possibilities for electrically reconfigurable SOT MRAM circuits, SOT oscillators, skyrmion and domain wall based devices, and magnonic circuits.

Experimental Setup

The study was conducted on a 2DEG–CoFeB/MgO heterostructure with large perpendicular magnetization. By controlling the gate voltage applied to the oxide layer, researchers were able to switch between two stable states of the 2DEG with different conductivities. This change in conductivity led to a corresponding change in the magnitude and direction of SOTs generated by an inplane current passing through the CoFeB layer. The researchers found that they could control both the amplitude and sign of these SOTs nonvolatilely.

Implications

This breakthrough is significant because it validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration. It also paves the way for developing novel devices based on electrically controllable SOTs such as MRAMs, oscillators, and magnonic circuits. The ability to control SOTs electrically in a nonvolatile way using gate voltages offers a new degree of freedom for designing spin–orbitronic devices with improved functionality and energy efficiency compared to existing technologies like ferromagnetic/spin Hall effect bilayers or other traditional methods used for manipulating magnetization via electrical means such as current pulses or magnetic fields from external coils or permanent magnets .

Conclusion

This research demonstrates how oxide interfaces can be used effectively to manipulate magnetization via electrical means without requiring additional components such as permanent magnets or external coils which can add complexity while reducing performance efficiency due their size constraints or power requirements respectively . Furthermore , this study shows how gate voltage control over two dimensional electron gases provides an additional degree of freedom not available when utilizing traditional ferromagnetic /spin hall effect bilayer stacks , thus allowing engineers greater flexibility when designing next generation information technologies powered by spin orbit torques .