Resonant inelastic tunneling in molecular junctions
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- Self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction
- Phonon-assisted resonance level model that considers mutual influence of electron and phonon subsystems
- Second-order cumulant expansion used to express correlation function of phonon shift generator in terms of phonon momentum Green function
- Equation of motion (EOM) method used to obtain approximate analog of Dyson equation for electron and phonon Green functions
- Emphasis on importance of self-consistency in resonance tunneling situations, especially with partially filled bridge levels
- Confirmation of absence of phonon sidebands in current vs. gate voltage plots at small source-drain voltage, even for systems with strong vibronic coupling
- Comprehensive framework for understanding electron transport in molecular junctions with significant electron-phonon interaction
- Insights into how these interactions influence transport properties and can be applied to various experimental setups involving molecular electronics
- Essential self-consistent procedure for accurately predicting transport behavior under different conditions and exploring phenomena related to vibronic coupling in molecular electronics devices.
Authors: Michael Galperin, Abraham Nitzan, Mark A. Ratner
Abstract: Within a phonon-assisted resonance level model we develop a self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction. The scheme takes into account the mutual influence of the electron and phonon subsystems. It is based on the 2nd order cumulant expansion, used to express the correlation function of the phonon shift generator in terms of the phonon momentum Green function. Equation of motion (EOM) method is used to obtain an approximate analog of the Dyson equation for the electron and phonon Green functions in the case of many-particle operators present in the Hamiltonian. To zero-order it is similar in particular cases (empty or filled bridge level) to approaches proposed earlier. The importance of self-consistency in resonance tunneling situations (partially filled bridge level) is stressed. We confirm, even for strong vibronic coupling, a previous suggestion concerning the absence of phonon sidebands in the current vs. gate voltage plot when the source-drain voltage is small.
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