Results of the summarizing process for the arXiv paper: 2309.01305v1

The electron's charge and spin degrees of freedom have long been at the core of modern electronic devices. However, with the in-depth investigation of two-dimensional materials, another degree of freedom known as the valley has emerged and attracted significant research interest. The valley refers to a property of electrons in certain materials where they occupy specific energy states within the crystal lattice. This intrinsic spontaneous valley polarization in two-dimensional magnetic systems, also known as ferrovalley material, provides a convenient way to detect and modulate the valley. In this review, the authors first introduce the development of valleytronics, which is a field that explores the manipulation and control of electrons based on their valley properties. They discuss how valley polarization forms through different orbital configurations such as p-, d-, and f-orbits. Furthermore, they delve into the investigation progress of modulating the valley polarization in two-dimensional ferrovalley materials using various physical fields including electric fields, stacking modes, strain effects, and interface effects. It is worth noting that despite early predictions of two-dimensional ferrovalley materials through density functional theory calculations, experimental progress has been limited due to challenges in sample characterization and preparation techniques. However, recent advancements by Guan et al. have successfully prepared intrinsic bulk ferrovalley material in experiments. The authors highlight that similar to spintronics devices which are mainly based on ferromagnetic materials; electronic devices based on spin injection semiconductor materials are still in their infancy. Ferrovalley materials offer a new platform for studying spintronics due to their strong coupling between valley and spin properties. Additionally, there has been exploration into using valleys for transmitting information with high fidelity and room temperature operability. In conclusion, this review provides an overview of the development of valleytronics and discusses the progress made in modulating the valley polarization of two-dimensional ferrovalley materials. The authors anticipate future developments in this field as researchers continue to explore new ways to harness the valley degree of freedom for advanced electronic devices and information processing.

• Electron's charge and spin degrees of freedom are important in electronic devices
• Valley, a new degree of freedom, has emerged in two-dimensional materials
• Valley refers to specific energy states occupied by electrons in certain materials
• Valley polarization is the intrinsic spontaneous polarization in ferrovalley materials
• Valleytronics explores manipulation and control of electrons based on their valley properties
• Different orbital configurations contribute to valley polarization (p-, d-, and f-orbits)
• Modulating valley polarization in ferrovalley materials can be achieved through various physical fields (electric fields, stacking modes, strain effects, interface effects)
• Experimental progress in two-dimensional ferrovalley materials has been limited due to challenges in sample characterization and preparation techniques
• Recent advancements have successfully prepared intrinsic bulk ferrovalley material
• Ferrovalley materials offer a new platform for studying spintronics and electronic devices based on spin injection semiconductor materials
• Valleys can be used for transmitting information with high fidelity and room temperature operability

Exploring the Valley Degree of Freedom for Advanced Electronic Devices

The electron's charge and spin degrees of freedom have long been at the core of modern electronic devices. However, with the in-depth investigation of two-dimensional materials, another degree of freedom known as the valley has emerged and attracted significant research interest. The valley refers to a property of electrons in certain materials where they occupy specific energy states within the crystal lattice. This intrinsic spontaneous valley polarization in two-dimensional magnetic systems, also known as ferrovalley material, provides a convenient way to detect and modulate the valley.

Valleytronics: Manipulating and Controlling Electrons Based on Their Valley Properties

In this review, the authors first introduce the development of valleytronics, which is a field that explores the manipulation and control of electrons based on their valley properties. They discuss how valley polarization forms through different orbital configurations such as p-, d-, and f-orbits. Furthermore, they delve into the investigation progress of modulating the valley polarization in two-dimensional ferrovalley materials using various physical fields including electric fields, stacking modes, strain effects, and interface effects. It is worth noting that despite early predictions of two-dimensional ferrovalley materials through density functional theory calculations, experimental progress has been limited due to challenges in sample characterization and preparation techniques.

Recent Advancements by Guan et al.

However, recent advancements by Guan et al. have successfully prepared intrinsic bulk ferrovalley material in experiments. The authors highlight that similar to spintronics devices which are mainly based on ferromagnetic materials; electronic devices based on spin injection semiconductor materials are still in their infancy. Ferrovalley materials offer a new platform for studying spintronics due to their strong coupling between valley and spin properties. Additionally, there has been exploration into using valleys for transmitting information with high fidelity and room temperature operability.

Conclusion

In conclusion, this review provides an overview of the development of valleytronics and discusses the progress made in modulating the valley polarization of two-dimensional ferrovalley materials. The authors anticipate future developments in this field as researchers continue to explore new ways to harness the valley degree