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Sideband Quenching in a Driven Double-Barrier System –Scaling Behavior for Inhomogeneous Potentials–
Jun-ichiro Ohe Jun-ichiro Ohe (Hokkaido University), Kousuke Yakubo (Hokkaido University)
Abstract: Using a transfer matrix method, we have studied the relationship between the conductance of a harmonically driven quantum dot system and the strength V ac of the time-varying potential in both cases of \hbarω≠Δε and \hbarω= Δε, where ω is the frequency of the time-varying potential and Δε is the energy distance between adjacent resonant levels of the system. In the off-resonance condition (\hbarω≠Δε), it is found that conductance dips appear in the V ac dependence of the sideband conductance instead of the perfect sideband quenching predicted by previous works. Our results show that conductance dips corresponding to the quenching scale with ω-1, while previous theories have suggested that the spectral weight of sideband components is scaled by ω-2 for inhomogeneous time-varying potentials. Under the resonance condition (\hbarω=Δε), our calculation shows the Rabi-type level splitting. The quenching effect of the Rabi-type splitting is also discussed.